New Chinese Flash Memory Stores Data Using Just One Electron, Slashing Requirement from 200,000 – a Potential Smartphone Game Changer.
The 'Guiyi' Breakthrough
According to ITC.ua — Техно: This development addresses a key limitation in current flash memory: the high number of electrons needed to reliably store a single bit. Researchers at Fudan University in Shanghai have engineered a two-dimensional flash memory that operates with only one electron, a drastic reduction from the typical 200,000 electrons. The memory works at room temperature, a significant achievement, and each electron generates a signal of roughly 0.5 volts, highlighting its efficiency. Professor Zhou Peng, a microelectronics expert who previously introduced PoX—the fastest non-volatile storage ever—in April 2022, led the team.
Path to Commercialization
Zhou Peng plans to launch a company within the next five years to commercialize the 'Guiyi' technology. He stressed that
“the technology must undergo mass production, after which it could disrupt existing approaches and 'shake up the data storage industry'”— Zhou Peng. The 'Guiyi' innovation could become a pivotal step in advancing data storage, with far-reaching impacts on mobile devices and other electronics. Its planned market entry in the coming years may heighten competition in the storage sector and accelerate the transition to more energy-efficient solutions.
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